SUM90P10-19-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

13.6W Ta 375W Tc

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Pulsed Drain Current-Max (IDM) :

90A

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Turn On Delay Time :

30 ns

Series :

TrenchFET®

Turn-Off Delay Time :

125 ns

Element Configuration :

Single

FET Type :

P-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Pin Count :

4

JESD-609 Code :

e3

Number of Elements :

1

Published :

2009

Number of Terminations :

2

Transistor Element Material :

SILICON

Power Dissipation :

13.6W

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

19m Ω @ 20A, 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

90A

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

17A

Rise Time :

720ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Fall Time (Typ) :

610 ns

Current - Continuous Drain (Id) @ 25°C :

90A Tc