SUM90N08-4M8P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

8 ns

Max Power Dissipation :

3.75W

Turn-Off Delay Time :

34 ns

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 20A, 10V

Terminal Form :

Gull wing

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Resistance :

4.8mOhm

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time :

23 ns

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

175°C

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Series :

TrenchFET®

Avalanche Energy Rating (Eas) :

245 mJ

Operating Mode :

ENHANCEMENT MODE

Rise Time :

17ns

Power Dissipation :

3.75W

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Pulsed Drain Current-Max (IDM) :

240A

Radiation Hardening :

No

Number of Terminations :

2

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6460pF @ 40V

Number of Elements :

1

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

75V

Case Connection :

DRAIN

JESD-609 Code :

e3

Published :

2013

Continuous Drain Current (ID) :

90A

Min Operating Temperature :

-55°C