SUM90N08-7M6P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Drain to Source Breakdown Voltage :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

32 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

90A Tc

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

7.6m Ω @ 30A, 10V

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

3.75W Ta 150W Tc

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

200A

Continuous Drain Current (ID) :

90A

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.8V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Series :

TrenchFET®

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

Published :

2016

Element Configuration :

Single

Mounting Type :

Surface Mount

Number of Terminations :

2

Power Dissipation :

3.75W

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3528pF @ 30V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260