SUM90N04-3M3P-E3
- Mfr.Part #
- SUM90N04-3M3P-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 90A TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Series :
- TrenchFET®
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 11 ns
- Fall Time (Typ) :
- 7 ns
- Factory Lead Time :
- 15 Weeks
- Turn-Off Delay Time :
- 45 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5286pF @ 20V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Resistance :
- 3.3MOhm
- Number of Channels :
- 1
- Weight :
- 1.437803g
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 7ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 90A
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2016
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 22A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Element Configuration :
- Single
- Power Dissipation :
- 3.1W
- Gate Charge (Qg) (Max) @ Vgs :
- 131nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Datasheets
- SUM90N04-3M3P-E3
N-Channel Tape & Reel (TR) 3.3m Ω @ 22A, 10V ±20V 5286pF @ 20V 131nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM90N04-3M3P-E3 Overview
A device's maximum input capacitance is 5286pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SUM90N04-3M3P-E3 Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 45 ns
SUM90N04-3M3P-E3 Applications
There are a lot of Vishay Siliconix
SUM90N04-3M3P-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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