SUM90N10-8M2P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Threshold Voltage :

2.5V

Mounting Type :

Surface Mount

Weight :

1.437803g

Transistor Application :

SWITCHING

Published :

2013

Power Dissipation :

300W

JESD-609 Code :

e3

Resistance :

8.2mOhm

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Mount :

Surface Mount

Turn On Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 20A, 10V

Number of Pins :

3

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

90A

Length :

10.41mm

FET Type :

N-Channel

Max Junction Temperature (Tj) :

175°C

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

240A

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

90A Tc

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Vgs (Max) :

±20V

Turn-Off Delay Time :

34 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 50V

Height :

4.826mm

Width :

9.65mm

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

14 Weeks

Rise Time :

17ns

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Pin Count :

3

Power Dissipation-Max :

3.75W Ta 300W Tc

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Fall Time (Typ) :

9 ns