SUM90220E-GE3
- Mfr.Part #
- SUM90220E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 64A D2PAK
- Stock
- 483
- In Stock :
- 483
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 7.5V 10V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 21.6m Ω @ 15A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain Current-Max (Abs) (ID) :
- 64A
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Surface Mount :
- yes
- Power Dissipation-Max :
- 230W Tc
- Pulsed Drain Current-Max (IDM) :
- 100A
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.0216Ohm
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 200V
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Unknown
- Series :
- ThunderFET®
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 101 mJ
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 14 Weeks
- Datasheets
- SUM90220E-GE3
N-Channel Tape & Reel (TR) 21.6m Ω @ 15A, 10V ±20V 1950pF @ 100V 48nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM90220E-GE3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 101 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1950pF @ 100V.The drain current is the maximum continuous current this device can conduct, which is 64A.Pulsed drain current is maximum rated peak drain current 100A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 7.5V 10V volts (7.5V 10V).
SUM90220E-GE3 Features
the avalanche energy rating (Eas) is 101 mJ
based on its rated peak drain current 100A.
a 200V drain to source voltage (Vdss)
SUM90220E-GE3 Applications
There are a lot of Vishay Siliconix
SUM90220E-GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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