SUM90N06-4M4P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Terminal Form :

Gull wing

Power Dissipation :

3.75W

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 20A, 10V

Turn-Off Delay Time :

36 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

245 mJ

Fall Time (Typ) :

8 ns

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Turn On Delay Time :

23 ns

Lead Free :

Lead Free

Power Dissipation-Max :

3.75W Ta 300W Tc

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Pin Count :

4

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

JESD-609 Code :

e3

Rise Time :

15ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

90A

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

240A

Resistance :

4.4mOhm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

6190pF @ 30V

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single