SUM90100E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Series :

TrenchFET?

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

200 V

Transistor Type :

1 N-Channel

Qualification :

-

Power Dissipation :

375

Maximum Operating Temperature :

+ 175 C

Channel Type :

N

Power Dissipation (Max) :

375W (Tc)

Channel Mode :

Enhancement

Tradename :

TrenchFET

Number of Channels :

1 Channel

Rise Time :

100 ns

Continuous Drain Current Id :

150

Product Status :

Active

Supplier Device Package :

TO-263 (D2Pak)

Input Capacitance (Ciss) (Max) @ Vds :

3930 pF @ 100 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Package Type :

D2PAK (TO-263)

Current - Continuous Drain (Id) @ 25°C :

150A (Tc)

Pin Count :

3

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

110 nC @ 10 V

Vgs (Max) :

±20V

FET Feature :

-

Brand :

Vishay / Siliconix

Rds On (Max) @ Id, Vgs :

11.4mOhm @ 16A, 10V

Mounting Style :

SMD/SMT

Subcategory :

MOSFETs

Number of Elements per Chip :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

Single

Package :

Bulk

Manufacturer :

Vishay

Product Category :

MOSFET

RoHS :

Details

Product Type :

MOSFET