SUD50P10-43L-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

40A

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

6.9W

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

ECCN Code :

EAR99

Power Dissipation-Max :

8.3W Ta 136W Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-252AA

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

43m Ω @ 9.2A, 10V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

37.1A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 50V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

37.1A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs (Max) :

±20V

Lead Free :

Lead Free

Published :

1995

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

100V