SUD50N024-09P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

6.5W Ta 39.5W Tc

Published :

2009

Number of Pins :

2

Pulsed Drain Current-Max (IDM) :

100A

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Case Connection :

DRAIN

Pbfree Code :

yes

Turn-Off Delay Time :

25 ns

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 20A, 10V

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

49A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Rise Time :

10ns

Number of Terminations :

2

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.017Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

6.5W

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

22V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Number of Elements :

1

Terminal Finish :

MATTE TIN OVER NICKEL

Fall Time (Typ) :

12 ns

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V