SUD50N03-06P-E3
- Mfr.Part #
- SUD50N03-06P-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 84A TO252
- Stock
- 12,935
- In Stock :
- 12,935
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Power Dissipation-Max :
- 8.3W Ta 88W Tc
- Length :
- 6.7056mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 10 ns
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 84A Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 6.5mOhm @ 20A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Max Operating Temperature :
- 175°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 30 ns
- Number of Pins :
- 2
- Series :
- TrenchFET®
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 6.5mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 3 V
- Drain to Source Voltage (Vdss) :
- 30V
- Rise Time :
- 12ns
- Continuous Drain Current (ID) :
- 30A
- Width :
- 6.223mm
- Element Configuration :
- Single
- Turn On Delay Time :
- 12 ns
- Drain to Source Resistance :
- 6.5mOhm
- Mount :
- Surface Mount
- Input Capacitance :
- 3.1nF
- REACH SVHC :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 8.3W
- Height :
- 2.3876mm
- Rds On Max :
- 6.5 mΩ
- Supplier Device Package :
- TO-252, (D-Pak)
- Lead Free :
- Lead Free
- Datasheets
- SUD50N03-06P-E3
N-Channel Tape & Reel (TR) 6.5mOhm @ 20A, 10V ±20V 3100pF @ 25V 30nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-06P-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 6.5mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SUD50N03-06P-E3 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 6.5mOhm
a 30V drain to source voltage (Vdss)
SUD50N03-06P-E3 Applications
There are a lot of Vishay Siliconix
SUD50N03-06P-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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