SUD50N02-06P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

26A

Lead Free :

Lead Free

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

9 ns

Operating Mode :

ENHANCEMENT MODE

Resistance :

6mOhm

Mount :

Surface Mount

Transistor Element Material :

SILICON

Nominal Vgs :

3 V

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Pin Count :

4

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

6.8W Ta 65W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 10V

Published :

2013

ECCN Code :

EAR99

Dual Supply Voltage :

20V

Factory Lead Time :

15 Weeks

Width :

6.22mm

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Turn-Off Delay Time :

24 ns

Height :

2.39mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

11 ns

Case Connection :

DRAIN

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Rds On (Max) @ Id, Vgs :

6m Ω @ 20A, 10V

Weight :

1.437803g

Element Configuration :

Single

Series :

TrenchFET®

Length :

6.73mm

Packaging :

Tape and Reel (TR)

Rise Time :

10ns

JESD-609 Code :

e3

Number of Terminations :

2

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Power Dissipation :

6.8W

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant