SUD50N02-09P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Turn On Delay Time :

8 ns

Max Operating Temperature :

175°C

Resistance :

9.5MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Mount :

Surface Mount

Number of Elements :

1

Turn-Off Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Lead Free :

Lead Free

Power Dissipation-Max :

6.5W Ta 39.5W Tc

Input Capacitance :

1.3nF

Radiation Hardening :

No

Rds On Max :

9.5 mΩ

Series :

TrenchFET®

Fall Time (Typ) :

12 ns

Published :

2009

Min Operating Temperature :

-55°C

Vgs (Max) :

±20V

Power Dissipation :

9.5W

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Supplier Device Package :

TO-252, (D-Pak)

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 20A, 10V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

9.5MOhm

Element Configuration :

Single

Rise Time :

10ns