SUD50N025-06P-E3
- Mfr.Part #
- SUD50N025-06P-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 78A TO252
- Stock
- 29,669
- In Stock :
- 29,669
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Weight :
- 1.437803g
- Turn On Delay Time :
- 9 ns
- Max Operating Temperature :
- 175°C
- Continuous Drain Current (ID) :
- 78A
- FET Type :
- N-Channel
- Width :
- 6.22mm
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 6.2 mΩ
- Vgs(th) (Max) @ Id :
- 2.4V @ 250μA
- Series :
- TrenchFET®
- Fall Time (Typ) :
- 8 ns
- Rise Time :
- 11ns
- Drain to Source Resistance :
- 6.2mOhm
- Drain to Source Voltage (Vdss) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- TO-252, (D-Pak)
- Vgs (Max) :
- ±20V
- Published :
- 2009
- Height :
- 2.39mm
- Input Capacitance :
- 2.49nF
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.73mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2490pF @ 12V
- Current - Continuous Drain (Id) @ 25°C :
- 78A Tc
- Turn-Off Delay Time :
- 24 ns
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 6.2mOhm @ 20A, 10V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Power Dissipation-Max :
- 10.7W Ta 65W Tc
- Min Operating Temperature :
- -55°C
- Datasheets
- SUD50N025-06P-E3
N-Channel Tape & Reel (TR) 6.2mOhm @ 20A, 10V ±20V 2490pF @ 12V 66nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N025-06P-E3 Overview
A device's maximum input capacitance is 2490pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 78A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 6.2mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SUD50N025-06P-E3 Features
a continuous drain current (ID) of 78A
the turn-off delay time is 24 ns
single MOSFETs transistor is 6.2mOhm
a 25V drain to source voltage (Vdss)
SUD50N025-06P-E3 Applications
There are a lot of Vishay Siliconix
SUD50N025-06P-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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