SUD50N03-06AP-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

26 ns

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Power Dissipation :

10W

Vgs(th) (Max) @ Id :

2.4V @ 250μA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Weight :

1.437803g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Height :

2.39mm

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 15V

Length :

6.73mm

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Transistor Application :

SWITCHING

Fall Time (Typ) :

9 ns

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Series :

TrenchFET®

Turn-Off Delay Time :

25 ns

Continuous Drain Current (ID) :

90A

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 20A, 10V

Terminal Form :

Gull wing

Element Configuration :

Single

Number of Channels :

1

Rise Time :

230ns

Number of Terminations :

2

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

50A

Width :

6.22mm

JESD-609 Code :

e3

Case Connection :

DRAIN

Nominal Vgs :

1.2 V

Pbfree Code :

yes

Power Dissipation-Max :

10W Ta 83W Tc

Resistance :

5.7mOhm

Vgs (Max) :

±20V