SUD50N03-11-E3
- Mfr.Part #
- SUD50N03-11-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A TO252
- Stock
- 52,079
- In Stock :
- 52,079
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.011Ohm
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1130pF @ 25V
- Fall Time (Typ) :
- 6 ns
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Turn-Off Delay Time :
- 18 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 800mV @ 250µA (Min)
- Transistor Element Material :
- SILICON
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 25A, 10V
- Power Dissipation :
- 7.5W
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-252AA
- Series :
- TrenchFET®
- Element Configuration :
- Single
- Rise Time :
- 10ns
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 7.5W Ta 62.5W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 100A
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 50A
- Datasheets
- SUD50N03-11-E3
N-Channel Tape & Reel (TR) 11m Ω @ 25A, 10V ±20V 1130pF @ 25V 20nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-11-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1130pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SUD50N03-11-E3 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 100A.
SUD50N03-11-E3 Applications
There are a lot of Vishay Siliconix
SUD50N03-11-E3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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