SUD50P08-26-E3
- Mfr.Part #
- SUD50P08-26-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 80V 50A TO252
- Stock
- 13,717
- In Stock :
- 13,717
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- P-Channel
- Power Dissipation :
- 8.3W
- Drain to Source Breakdown Voltage :
- -80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-252, (D-Pak)
- Continuous Drain Current (ID) :
- 12.9A
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- Element Configuration :
- Single
- Drain to Source Resistance :
- 26mOhm
- Power Dissipation-Max :
- 8.3W Ta 136W Tc
- Fall Time (Typ) :
- 65 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5160pF @ 40V
- Max Operating Temperature :
- 175°C
- Drain to Source Voltage (Vdss) :
- 80V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2009
- Turn-Off Delay Time :
- 90 ns
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Rds On Max :
- 26 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 5.16nF
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 12.9A, 10V
- Rise Time :
- 50ns
- Datasheets
- SUD50P08-26-E3
P-Channel Tape & Reel (TR) 26mOhm @ 12.9A, 10V ±20V 5160pF @ 40V 155nC @ 10V 80V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50P08-26-E3 Overview
The maximum input capacitance of this device is 5160pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12.9A.When VGS=-80V, and ID flows to VDS at -80VVDS, the drain-source breakdown voltage is -80V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 26mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
SUD50P08-26-E3 Features
a continuous drain current (ID) of 12.9A
a drain-to-source breakdown voltage of -80V voltage
the turn-off delay time is 90 ns
single MOSFETs transistor is 26mOhm
a 80V drain to source voltage (Vdss)
SUD50P08-26-E3 Applications
There are a lot of Vishay Siliconix
SUD50P08-26-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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