SUD50P08-25L-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

Drain Current-Max (Abs) (ID) :

50A

Pbfree Code :

yes

Number of Elements :

1

Number of Terminations :

2

Pin Count :

4

Weight :

1.437803g

Max Junction Temperature (Tj) :

175°C

Continuous Drain Current (ID) :

-12.5A

Turn On Delay Time :

45 ns

Series :

TrenchFET®

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-80V

JESD-30 Code :

R-PSSO-G2

Resistance :

25.2mOhm

Power Dissipation :

8.3W

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2009

FET Type :

P-Channel

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Height :

2.507mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Number of Channels :

1

Radiation Hardening :

No

Threshold Voltage :

-3V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.73mm

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Rds On (Max) @ Id, Vgs :

25.2m Ω @ 12.5A, 10V

Drain to Source Voltage (Vdss) :

80V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

40A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

8.3W Ta 136W Tc

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

100 ns

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

95 ns

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 40V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Width :

6.22mm