SUD50P06-15-GE3
- Mfr.Part #
- SUD50P06-15-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 50A TO252
- Stock
- 157,011
- In Stock :
- 157,011
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 80A
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 15 ns
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Published :
- 2013
- Qualification Status :
- Not Qualified
- FET Type :
- P-Channel
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- -50A
- Pin Count :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4950pF @ 25V
- Height :
- 2.507mm
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 2.5W Ta 113W Tc
- Factory Lead Time :
- 14 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchFET®
- Turn-Off Delay Time :
- 175 ns
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Max Junction Temperature (Tj) :
- 150°C
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- -60V
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 17A, 10V
- Number of Channels :
- 1
- Power Dissipation :
- 2.5W
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Datasheets
- SUD50P06-15-GE3
P-Channel Tape & Reel (TR) 15m Ω @ 17A, 10V ±20V 4950pF @ 25V 165nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50P06-15-GE3 Description
The SUD50P06-15-GE3 is a P-Channel 60 V (D-S) MOSFET. When it comes to metal-oxide-semiconductor field-effect transistors (MOSFETs), a power MOSFET is a special kind that is made to manage large amounts of power. Its key benefits are high switching speed and good efficiency at low voltages when compared to other power semiconductor devices like an insulated-gate bipolar transistor (IGBT) or a thyristor. It shares an accessible gate with the IGBT that makes it simple to drive. They occasionally have low gain to the point where a gate voltage greater than the voltage under control is required.
SUD50P06-15-GE3 Features
-
TrenchFET® power MOSFET
-
Low gate drive power
-
Fast switching speed
-
Easy advanced paralleling capability
-
Wide bandwidth, ruggedness
-
Easy drive
-
Simple biasing
-
Ease of application
-
Ease of repair
SUD50P06-15-GE3 Applications
-
Load switch
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters.
-
Automotive applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
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