SUD50P04-23-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

23m Ω @ 15A, 10V

Power Dissipation :

3.1W

Radiation Hardening :

No

ECCN Code :

EAR99

Turn-Off Delay Time :

36 ns

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

40V

Fall Time (Typ) :

9 ns

JESD-609 Code :

e3

Number of Pins :

3

Case Connection :

DRAIN

Turn On Delay Time :

22 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

20 mJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1880pF @ 20V

Terminal Finish :

MATTE TIN OVER NICKEL

FET Type :

P-Channel

Power Dissipation-Max :

3.1W Ta 45.4W Tc

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta 20A Tc

Terminal Form :

Gull wing

Element Configuration :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

16V

Pulsed Drain Current-Max (IDM) :

50A

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±16V

Pin Count :

4

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

40V

Continuous Drain Current (ID) :

8.2A

Drain Current-Max (Abs) (ID) :

20A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE