SUD50P04-09L-E3
- Mfr.Part #
- SUD50P04-09L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 50A TO252
- Stock
- 46,356
- In Stock :
- 46,356
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.73mm
- Mount :
- Surface Mount, Through Hole
- Drain to Source Breakdown Voltage :
- -40V
- Drain to Source Voltage (Vdss) :
- 40V
- ECCN Code :
- EAR99
- Weight :
- 1.437803g
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Element Configuration :
- Single
- Pin Count :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- -1V
- Rise Time :
- 60ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- Unknown
- Turn On Delay Time :
- 10 ns
- Resistance :
- 9.4mOhm
- Published :
- 2009
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 50A
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Power Dissipation :
- 3W
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Power Dissipation-Max :
- 3W Ta 136W Tc
- Pbfree Code :
- yes
- Nominal Vgs :
- -1 V
- Width :
- 6.22mm
- Number of Terminations :
- 2
- Factory Lead Time :
- 14 Weeks
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 140 ns
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Height :
- 2.39mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 24A, 10V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 145 ns
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Series :
- TrenchFET®
- Datasheets
- SUD50P04-09L-E3
P-Channel Tape & Reel (TR) 9.4m Ω @ 24A, 10V ±20V 4800pF @ 25V 150nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50P04-09L-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -40V.As a result of its turn-off delay time, which is 145 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -1V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SUD50P04-09L-E3 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 145 ns
a threshold voltage of -1V
a 40V drain to source voltage (Vdss)
SUD50P04-09L-E3 Applications
There are a lot of Vishay Siliconix
SUD50P04-09L-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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