SUD50N10-34P-T4-E3

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Mfr.Part #
SUD50N10-34P-T4-E3
Manufacturer
Vishay
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 5.9A/20A TO252
Stock
3,475
In Stock :
3,475

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Published :
2009
Series :
TrenchFET®
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Power Dissipation-Max :
2.5W Ta 56W Tc
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs :
34m Ω @ 7A, 10V
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
100V
Continuous Drain Current (ID) :
5.9A
Power Dissipation :
2.5W
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Current - Continuous Drain (Id) @ 25°C :
5.9A Ta 20A Tc
Weight :
1.437803g
Introducing Transistors - FETs, MOSFETs - Single Vishay SUD50N10-34P-T4-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, SUD50N10-34P-T4-E3 pinout, SUD50N10-34P-T4-E3 datasheet PDF, SUD50N10-34P-T4-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SUD50N10-34P-T4-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SUD50N10-34P-T4-E3


N-Channel Tape & Reel (TR) 34m Ω @ 7A, 10V ±20V 1800pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SUD50N10-34P-T4-E3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

SUD50N10-34P-T4-E3 Features


a continuous drain current (ID) of 5.9A
a drain-to-source breakdown voltage of 100V voltage


SUD50N10-34P-T4-E3 Applications


There are a lot of Vishay Siliconix
SUD50N10-34P-T4-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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