SUD50N10-18P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3W Ta 136.4W Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rise Time :

10ns

Number of Pins :

2

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 50V

Vgs (Max) :

±20V

Power Dissipation :

136.4W

Rds On (Max) @ Id, Vgs :

18.5m Ω @ 15A, 10V

Continuous Drain Current (ID) :

50A

Fall Time (Typ) :

8 ns

RoHS Status :

ROHS3 Compliant

Published :

2016

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

18 ns

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Pbfree Code :

yes

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

TrenchFET®

Resistance :

18.5mOhm

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta 50A Tc