SUD50N06-08H-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

28 ns

Height :

2.3876mm

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Number of Pins :

3

Power Dissipation :

136W

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V

Avalanche Energy Rating (Eas) :

125 mJ

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

50 ns

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 20A, 10V

Continuous Drain Current (ID) :

93A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Factory Lead Time :

13 Weeks

Number of Elements :

1

Mounting Type :

Surface Mount

Pin Count :

4

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Rise Time :

13ns

Case Connection :

DRAIN

Length :

6.7056mm

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

50A

Drain-source On Resistance-Max :

0.0078Ohm

Current - Continuous Drain (Id) @ 25°C :

93A Tc

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

100A

Width :

6.223mm

Power Dissipation-Max :

3W Ta 136W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Element Configuration :

Single

Fall Time (Typ) :

10 ns

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pbfree Code :

yes

Published :

2004

Vgs (Max) :

±20V