SUD50N04-16P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.1W Ta 35.7W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

16m Ω @ 15A, 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1655pF @ 20V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

50A

Mount :

Surface Mount

Number of Terminations :

2

Weight :

1.437803g

Terminal Finish :

MATTE TIN OVER NICKEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

120ns

Vgs(th) (Max) @ Id :

2.2V @ 250µA

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

40 ns

Turn On Delay Time :

19 ns

Avalanche Energy Rating (Eas) :

20 mJ

Drain to Source Breakdown Voltage :

40V

JESD-30 Code :

R-PSSO-G2

Width :

6.22mm

Length :

6.73mm

Element Configuration :

Single

Fall Time (Typ) :

36 ns

FET Type :

N-Channel

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

16V

Height :

2.39mm

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta 20A Tc

Number of Elements :

1

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

3.1W

Vgs (Max) :

±16V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Continuous Drain Current (ID) :

9.8A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Published :

2016

Peak Reflow Temperature (Cel) :

NOT SPECIFIED