SUD50N04-09H-E3
- Mfr.Part #
- SUD50N04-09H-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 50A TO252
- Stock
- 19,455
- In Stock :
- 19,455
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 50A
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Rise Time :
- 20ns
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 20A, 10V
- Number of Pins :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Published :
- 2009
- Power Dissipation :
- 8.33W
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Factory Lead Time :
- 13 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Breakdown Voltage :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.009Ohm
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 35 ns
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 11 ns
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 83.3W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- TrenchFET®
- Datasheets
- SUD50N04-09H-E3
N-Channel Tape & Reel (TR) 9m Ω @ 20A, 10V ±20V 3700pF @ 25V 85nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N04-09H-E3 Overview
A device's maximal input capacitance is 3700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 35 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
SUD50N04-09H-E3 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 35 ns
SUD50N04-09H-E3 Applications
There are a lot of Vishay Siliconix
SUD50N04-09H-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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