STW3N170
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- Mfr.Part #
- STW3N170
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1700V 2.6A TO247-3
- Stock
- 27
- In Stock ：
- 27
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- STW3N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Surface Mount :
- No
- Power Dissipation-Max :
- 160mW
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 2.3A
- Rds On (Max) @ Id, Vgs :
- 13 Ω @ 1.3A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- PowerMESH™
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 1700V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Datasheets
- STW3N170
N-Channel Tube 13 Ω @ 1.3A, 10V ±30V 1100pF @ 100V 44nC @ 10V 1700V TO-247-3
STW3N170 Description
The STW3N170 is a single power MOSFET made by STMicroelectronics. STW3N170 has a temperature range of -55°C to 150°C TJ and a maximum power dissipation of 160mW. The STMicroelectronics consolidated strip-layout based MESH OVERLAYTM process was used to create this Power MOSFET. As a result, the product performs as well as or better than comparable standard parts from other manufacturers.
STW3N170 Features
? Intrinsic capacitances and Qg minimized
? High-speed switching
? 100% avalanche tested
STW3N170 Applications
? Switching applications
? Active Clamp Switch
? Switch application
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