STW30NM60N
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- Mfr.Part #
- STW30NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 25A TO247-3
- Stock
- 8,056
- In Stock ：
- 8,056
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 50V
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 25A
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Base Part Number :
- STW30N
- JEDEC-95 Code :
- TO-247AC
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Fall Time (Typ) :
- 70 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Rise Time :
- 24ns
- Power Dissipation-Max :
- 190W Tc
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 12.5A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 125 ns
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- Resistance :
- 130mOhm
- Terminal Finish :
- Tin
- Package / Case :
- TO-247-3
- Power Dissipation :
- 190W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- MDmesh™ II
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- STW30NM60N
N-Channel Tube 130m Ω @ 12.5A, 10V ±30V 2700pF @ 50V 91nC @ 10V TO-247-3
STW30NM60N Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 900 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2700pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 125 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STW30NM60N Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 125 ns
STW30NM60N Applications
There are a lot of STMicroelectronics
STW30NM60N applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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