STW34N65M5
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- Mfr.Part #
- STW34N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 28A TO247
- Stock
- 8
- In Stock ：
- 8
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 62.5nC @ 10V
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 5.15mm
- Length :
- 15.75mm
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±25V
- Number of Elements :
- 1
- Resistance :
- 110mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Gate to Source Voltage (Vgs) :
- 25V
- Drain to Source Breakdown Voltage :
- 650V
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 28A
- Packaging :
- Tube
- Power Dissipation :
- 190W
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 59 ns
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 14A, 10V
- Turn-Off Delay Time :
- 59 ns
- Base Part Number :
- STW34N
- Factory Lead Time :
- 17 Weeks
- Height :
- 20.15mm
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Power Dissipation-Max :
- 190W Tc
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Series :
- MDmesh™ V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- STW34N65M5
N-Channel Tube 110m Ω @ 14A, 10V ±25V 2700pF @ 100V 62.5nC @ 10V TO-247-3
STW34N65M5 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2700pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 59 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 59 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STW34N65M5 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 59 ns
STW34N65M5 Applications
There are a lot of STMicroelectronics
STW34N65M5 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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