STW30N20
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- Mfr.Part #
- STW30N20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 30A TO247-3
- Stock
- 1,356
- In Stock ：
- 1,356
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1597pF @ 25V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 38 ns
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STW30N
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Voltage - Rated DC :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Mounting Type :
- Through Hole
- Series :
- STripFET™
- Power Dissipation-Max :
- 125W Tc
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 15A, 10V
- Packaging :
- Tube
- Fall Time (Typ) :
- 8.8 ns
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.075Ohm
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 200V
- Continuous Drain Current (ID) :
- 30A
- Current Rating :
- 30A
- Pin Count :
- 3
- Power Dissipation :
- 125W
- Avalanche Energy Rating (Eas) :
- 140 mJ
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 120A
- Number of Elements :
- 1
- Element Configuration :
- Single
- Rise Time :
- 15.7ns
- Turn On Delay Time :
- 35 ns
- Datasheets
- STW30N20
N-Channel Tube 75m Ω @ 15A, 10V 1597pF @ 25V 38nC @ 10V TO-247-3
STW30N20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 140 mJ.A device's maximum input capacitance is 1597pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 38 ns.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.
STW30N20 Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 120A.
STW30N20 Applications
There are a lot of STMicroelectronics
STW30N20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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