STW30NM50N
- Mfr.Part #
- STW30NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 27A TO247-3
- Stock
- 936
- In Stock :
- 936
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 115m Ω @ 13.5A, 10V
- Resistance :
- 115mOhm
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 60 ns
- Operating Temperature :
- 150°C TJ
- Drain Current-Max (Abs) (ID) :
- 27A
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 2740pF @ 50V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 20ns
- Power Dissipation-Max :
- 190W Tc
- Drain to Source Breakdown Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 25V
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Vgs (Max) :
- ±25V
- Package / Case :
- TO-247-3
- Case Connection :
- Isolated
- Base Part Number :
- STW30N
- Pulsed Drain Current-Max (IDM) :
- 108A
- Power Dissipation :
- 190W
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 115 ns
- Threshold Voltage :
- 3V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- FET Type :
- N-Channel
- Series :
- MDmesh™ II
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247AC
- Continuous Drain Current (ID) :
- 13.5A
- Datasheets
- STW30NM50N

N-Channel Tube 115m Ω @ 13.5A, 10V ±25V 2740pF @ 50V 94nC @ 10V TO-247-3
STW30NM50N Description
The STW30NM50N is made with MDmeshTM Technology's second generation. This ground-breaking Power MOSFET combines a new vertical structure with the Company's strip layout to produce one of the lowest on-resistance and gate charges in the world. As a result, it is appropriate for the most demanding high-efficiency converters.
STW30NM50N Features
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Low gate input resistance
STW30NM50N Applications
-
General-purpose amplifier
-
Switching applications
-
Power management
-
Industrial
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