STW30NM60D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

600V

Turn-Off Delay Time :

75 ns

Current :

34A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Power Dissipation :

312W

Fall Time (Typ) :

35 ns

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Continuous Drain Current (ID) :

30A

JEDEC-95 Code :

TO-247AC

Rise Time :

33ns

Reach Compliance Code :

not_compliant

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

MDmesh™

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±30V

ECCN Code :

EAR99

Current Rating :

30A

Base Part Number :

STW30N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Voltage :

600V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

312W Tc

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-247-3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Qualification Status :

Not Qualified

Pin Count :

3

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

740 mJ

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

145m Ω @ 15A, 10V

Drain-source On Resistance-Max :

0.145Ohm