STW33N60M2
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- Mfr.Part #
- STW33N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO247
- Stock
- 4,752
- In Stock ：
- 4,752
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Weight :
- 38.000013g
- Number of Channels :
- 1
- Fall Time (Typ) :
- 9 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 13A, 10V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Length :
- 15.75mm
- Turn On Delay Time :
- 16 ns
- Turn-Off Delay Time :
- 109 ns
- Power Dissipation-Max :
- 190W Tc
- Factory Lead Time :
- 16 Weeks
- Number of Pins :
- 3
- Vgs (Max) :
- ±25V
- Power Dissipation :
- 190W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1781pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 5.15mm
- Gate to Source Voltage (Vgs) :
- 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 45.5nC @ 10V
- Height :
- 20.15mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Rise Time :
- 9.6ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 26A
- Drain to Source Voltage (Vdss) :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Package / Case :
- TO-247-3
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- STW33N
- Series :
- MDmesh™ II Plus
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Datasheets
- STW33N60M2
N-Channel Tube 125m Ω @ 13A, 10V ±25V 1781pF @ 100V 45.5nC @ 10V 600V TO-247-3
STW33N60M2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1781pF @ 100V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 109 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW33N60M2 Features
a continuous drain current (ID) of 26A
the turn-off delay time is 109 ns
a 600V drain to source voltage (Vdss)
STW33N60M2 Applications
There are a lot of STMicroelectronics
STW33N60M2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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