STW31N65M5
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- Mfr.Part #
- STW31N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A TO247
- Stock
- 14
- In Stock ：
- 14
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Height :
- 20.15mm
- Power Dissipation-Max :
- 150W Tc
- RoHS Status :
- ROHS3 Compliant
- Length :
- 15.75mm
- Rds On (Max) @ Id, Vgs :
- 148m Ω @ 11A, 10V
- Operating Temperature :
- 150°C TJ
- Turn-Off Delay Time :
- 46 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 100V
- Gate to Source Voltage (Vgs) :
- 25V
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 650V
- Resistance :
- 148mOhm
- Width :
- 5.15mm
- Power Dissipation :
- 150W
- Series :
- MDmesh™ V
- Number of Pins :
- 3
- Base Part Number :
- STW31N
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 22A
- Factory Lead Time :
- 17 Weeks
- Packaging :
- Tube
- Configuration :
- Single
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 46 ns
- Vgs (Max) :
- ±25V
- Datasheets
- STW31N65M5
N-Channel Tube 148m Ω @ 11A, 10V ±25V 816pF @ 100V 45nC @ 10V TO-247-3
STW31N65M5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 816pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 46 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 46 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STW31N65M5 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 46 ns
STW31N65M5 Applications
There are a lot of STMicroelectronics
STW31N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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