STW30NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Turn-Off Delay Time :

110 ns

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Resistance :

130mOhm

Series :

FDmesh™ II

Mount :

Through Hole

Voltage :

600V

Power Dissipation :

190W

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

ECCN Code :

EAR99

Fall Time (Typ) :

75 ns

Number of Terminations :

3

Continuous Drain Current (ID) :

25A

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 50V

Rise Time :

50ns

Power Dissipation-Max :

190W Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current :

34A

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Base Part Number :

STW30N

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

900 mJ

Lead Free :

Lead Free