STW3N150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Drain-source On Resistance-Max :

9Ohm

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

2.5A

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Number of Elements :

1

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

150°C TJ

Contact Plating :

Tin

Mount :

Through Hole

Vgs (Max) :

±30V

Element Configuration :

Single

Fall Time (Typ) :

61 ns

Number of Pins :

3

Drain to Source Voltage (Vdss) :

1500V

Rise Time :

47ns

Avalanche Energy Rating (Eas) :

450 mJ

Power Dissipation-Max :

140W Tc

Continuous Drain Current (ID) :

1.3A

Drain to Source Breakdown Voltage :

1.5kV

Turn On Delay Time :

24 ns

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

45 ns

Rds On (Max) @ Id, Vgs :

9 Ω @ 1.3A, 10V

Package / Case :

TO-247-3

Number of Terminations :

3

Mounting Type :

Through Hole

Base Part Number :

STW3N

Factory Lead Time :

12 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

20.15mm

Input Capacitance (Ciss) (Max) @ Vds :

939pF @ 25V

Power Dissipation :

140W

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Length :

15.75mm

FET Type :

N-Channel

Width :

5.15mm

Gate Charge (Qg) (Max) @ Vgs :

29.3nC @ 10V

Series :

PowerMESH™

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant