STW36NM60ND

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Mfr.Part #
STW36NM60ND
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 29A TO247
Stock
4,826
In Stock :
4,826

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
110m Ω @ 14.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
2785pF @ 50V
Vgs(th) (Max) @ Id :
5V @ 250μA
FET Type :
N-Channel
Vgs (Max) :
±25V
Power Dissipation-Max :
190W Tc
Base Part Number :
STW36N
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
Number of Pins :
3
Package / Case :
TO-247-3
Series :
Automotive, AEC-Q101, FDmesh™ II
Turn On Delay Time :
30 ns
Gate to Source Voltage (Vgs) :
25V
Turn-Off Delay Time :
111 ns
Packaging :
Tube
JESD-609 Code :
e3
Power Dissipation :
190W
Drain to Source Breakdown Voltage :
650V
Factory Lead Time :
16 Weeks
Lead Free :
Lead Free
Radiation Hardening :
No
Width :
5.15mm
Gate Charge (Qg) (Max) @ Vgs :
80.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
29A Tc
Length :
15.75mm
Fall Time (Typ) :
61.8 ns
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
600V
Continuous Drain Current (ID) :
29A
Element Configuration :
Single
Rise Time :
53.4ns
Height :
20.15mm
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Resistance :
110mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Datasheets
STW36NM60ND
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW36NM60ND from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STW36N, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:150°C TJ, STW36NM60ND pinout, STW36NM60ND datasheet PDF, STW36NM60ND amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW36NM60ND ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW36NM60ND


N-Channel Tube 110m Ω @ 14.5A, 10V ±25V 2785pF @ 50V 80.4nC @ 10V 600V TO-247-3

STW36NM60ND Overview


A device's maximum input capacitance is 2785pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 29A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 111 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

STW36NM60ND Features


a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 111 ns
a 600V drain to source voltage (Vdss)


STW36NM60ND Applications


There are a lot of STMicroelectronics
STW36NM60ND applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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