STW36NM60N
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- Mfr.Part #
- STW36NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 29A TO247-3
- Stock
- 38,178
- In Stock ：
- 38,178
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 61.8 ns
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 111 ns
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Height :
- 20.15mm
- Resistance :
- 110mOhm
- Vgs (Max) :
- ±25V
- Drain to Source Breakdown Voltage :
- 650V
- Power Dissipation-Max :
- 190W Tc
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Length :
- 15.75mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 29A
- FET Type :
- N-Channel
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2785pF @ 50V
- Packaging :
- Tube
- Width :
- 5.15mm
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 14.5A, 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Turn On Delay Time :
- 30 ns
- Base Part Number :
- STW36N
- Factory Lead Time :
- 16 Weeks
- Power Dissipation :
- 190W
- Package / Case :
- TO-247-3
- Rise Time :
- 53.4ns
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 80.4nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Series :
- Automotive, AEC-Q101, FDmesh™ II
- ECCN Code :
- EAR99
- Datasheets
- STW36NM60N
N-Channel Tube 110m Ω @ 14.5A, 10V ±25V 2785pF @ 50V 80.4nC @ 10V 600V TO-247-3
STW36NM60ND Overview
A device's maximum input capacitance is 2785pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 29A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 111 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
STW36NM60ND Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 111 ns
a 600V drain to source voltage (Vdss)
STW36NM60ND Applications
There are a lot of STMicroelectronics
STW36NM60ND applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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