STW36N55M5
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- Mfr.Part #
- STW36N55M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 33A TO247
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Series :
- MDmesh™ V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Length :
- 15.75mm
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2950pF @ 100V
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 56 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 550V
- Width :
- 5.15mm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Power Dissipation-Max :
- 190W Tc
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.08Ohm
- Continuous Drain Current (ID) :
- 33A
- Lead Free :
- Lead Free
- Power Dissipation :
- 190W
- FET Type :
- N-Channel
- Height :
- 20.15mm
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Base Part Number :
- STW36N
- Vgs (Max) :
- ±25V
- Packaging :
- Tube
- Turn-Off Delay Time :
- 56 ns
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 16.5A, 10V
- Factory Lead Time :
- 17 Weeks
- Datasheets
- STW36N55M5
N-Channel Tube 80m Ω @ 16.5A, 10V ±25V 2950pF @ 100V 62nC @ 10V TO-247-3
STW36N55M5 Overview
A device's maximum input capacitance is 2950pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 33A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=550V, and this device has a drain-to-source breakdown voltage of 550V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 56 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STW36N55M5 Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 56 ns
STW36N55M5 Applications
There are a lot of STMicroelectronics
STW36N55M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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