STW35N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Package / Case :

TO-247-3

Rise Time :

12ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Number of Pins :

3

Power Dissipation-Max :

160W Tc

Fall Time (Typ) :

16 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Continuous Drain Current (ID) :

27A

Case Connection :

Isolated

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3750pF @ 100V

Packaging :

Tube

Vgs (Max) :

±25V

Resistance :

98mOhm

Transistor Application :

SWITCHING

Series :

MDmesh™ V

Turn On Delay Time :

60 ns

Width :

5.15mm

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

FET Type :

N-Channel

Base Part Number :

STW35N

Avalanche Energy Rating (Eas) :

800 mJ

Number of Elements :

1

Turn-Off Delay Time :

60 ns

Moisture Sensitivity Level (MSL) :

Not Applicable

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

98m Ω @ 13.5A, 10V

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Height :

20.15mm

Terminal Finish :

Tin (Sn)

Power Dissipation :

160W

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

25V

Length :

15.75mm

Drain to Source Breakdown Voltage :

650V

Transistor Element Material :

SILICON