STW35N60DM2

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Mfr.Part #
STW35N60DM2
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 28A TO247
Stock
1
In Stock :
1

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±25V
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Rds On (Max) @ Id, Vgs :
110m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 100V
Threshold Voltage :
4V
Number of Pins :
3
Power Dissipation-Max :
210W Tc
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
17 Weeks
Drain to Source Voltage (Vdss) :
600V
FET Type :
N-Channel
REACH SVHC :
No SVHC
Base Part Number :
STW35N
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
28A
Package / Case :
TO-247-3
Series :
MDmesh™ DM2
ECCN Code :
EAR99
Mount :
Through Hole
Datasheets
STW35N60DM2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STW35N60DM2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:STW35N, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, STW35N60DM2 pinout, STW35N60DM2 datasheet PDF, STW35N60DM2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STW35N60DM2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STW35N60DM2


N-Channel Tube 110m Ω @ 14A, 10V ±25V 2400pF @ 100V 54nC @ 10V 600V TO-247-3

STW35N60DM2 Description


This quick recovery diode series from MDmeshTM is made up of high voltage N-channel Power MOSFETs. It is perfect for bridge topologies and ZVS phase-shift converters because it has extremely low recovery charge (Qrr) and time (trr) along with low RDS(on), making it suited for the most demanding high efficiency converters.



STW35N60DM2 Features


  • Fast-recovery body diode

  • Extremely low gate charge and input capacitance

  • Low on-resistance

  • 100% avalanche tested

  • Extremely high dv/dt ruggedness

  • Zener-protected



STW35N60DM2 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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