STW28NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

23A Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

62.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Number of Channels :

1

Base Part Number :

STW28N

Weight :

38.000013g

Power Dissipation-Max :

190W Tc

Mounting Type :

Through Hole

Lead Free :

Lead Free

Rise Time :

21.5ns

Vgs (Max) :

±25V

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

650V

Number of Elements :

1

Number of Pins :

3

Width :

5.15mm

Package / Case :

TO-247-3

Number of Terminations :

3

Element Configuration :

Single

Height :

20.15mm

Turn-Off Delay Time :

92 ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Fall Time (Typ) :

27 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

50 mJ

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

92A

Radiation Hardening :

No

Turn On Delay Time :

23.5 ns

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

19W

Series :

FDmesh™ II

Rds On (Max) @ Id, Vgs :

150m Ω @ 11.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2090pF @ 100V

Packaging :

Tube

Continuous Drain Current (ID) :

23A

ECCN Code :

EAR99

Case Connection :

DRAIN

Length :

15.75mm