STW20NM50FD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

6.35mm

Transistor Application :

SWITCHING

Number of Elements :

1

Voltage - Rated DC :

500V

Turn On Delay Time :

22 ns

Number of Terminations :

3

Element Configuration :

Single

Weight :

9.071847g

Operating Temperature :

150°C TJ

Threshold Voltage :

4V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

ECCN Code :

EAR99

Base Part Number :

STW20N

Series :

FDmesh™

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

80A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Resistance :

250mOhm

REACH SVHC :

No SVHC

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

500V

Current Rating :

20A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Length :

38.1mm

Number of Pins :

3

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

700 mJ

Contact Plating :

Tin

Continuous Drain Current (ID) :

20A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

250m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Width :

19.05mm

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

214W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 25V

Power Dissipation :

214W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

20ns