STW200NF03

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

480A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0028Ohm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Fall Time (Typ) :

80 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

300ns

ECCN Code :

EAR99

Power Dissipation :

350W

Turn On Delay Time :

50 ns

Drain to Source Breakdown Voltage :

30V

Series :

STripFET™ II

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Package / Case :

TO-247-3

Turn-Off Delay Time :

100 ns

Number of Elements :

1

Continuous Drain Current (ID) :

120A

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Current Rating :

120A

Pin Count :

3

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

4000 mJ

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 60A, 10V

Power Dissipation-Max :

350W Tc

Base Part Number :

STW200

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

JEDEC-95 Code :

TO-247AC

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel