STW20NM60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

290mOhm

Threshold Voltage :

4V

Lead Free :

Lead Free

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

ECCN Code :

EAR99

Continuous Drain Current (ID) :

20A

Fall Time (Typ) :

11 ns

Vgs (Max) :

±30V

Width :

6.35mm

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Transistor Application :

SWITCHING

Voltage - Rated DC :

650V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

80A

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STW20N

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Pins :

3

Mount :

Through Hole

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Current Rating :

20A

Turn On Delay Time :

25 ns

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

650 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Pin Count :

3

Rise Time :

20ns

Height :

6.35mm

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Power Dissipation :

192W

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Power Dissipation-Max :

192W Tc

Radiation Hardening :

No

Length :

50.8mm

Factory Lead Time :

16 Weeks

Series :

MDmesh™

JESD-609 Code :

e3

Turn-Off Delay Time :

42 ns

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Drain to Source Breakdown Voltage :

600V

Weight :

4.535924g