STW20NM50
- Mfr.Part #
- STW20NM50
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 20A TO247-3
- Stock
- 1,780
- In Stock :
- 1,780
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Reach Compliance Code :
- not_compliant
- Width :
- 5.15mm
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Rise Time :
- 16ns
- Drain to Source Breakdown Voltage :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 80A
- Voltage - Rated DC :
- 550V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Base Part Number :
- STW20N
- Power Dissipation-Max :
- 214W Tc
- Turn On Delay Time :
- 24 ns
- Package / Case :
- TO-247-3
- Length :
- 15.75mm
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Threshold Voltage :
- 4V
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 20.15mm
- Fall Time (Typ) :
- 8.5 ns
- Current Rating :
- 20A
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 10A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- MDmesh™
- Weight :
- 9.071847g
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 214W
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 20A
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Element Configuration :
- Single
- Resistance :
- 250mOhm
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1480pF @ 25V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Datasheets
- STW20NM50

N-Channel Tube 250m Ω @ 10A, 10V ±30V 1480pF @ 25V 56nC @ 10V TO-247-3
STW20NM50 Description
The STMicroelectronics STW20NM50 is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges.
STW20NM50 Features
-
High dv/dt and avalanche capabilities
-
Low input capacitance and gate charge
-
100% avalanche tested
-
Low gate input resistance
STW20NM50 Applications
-
High voltage converters
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