STW20N95K5
- Mfr.Part #
- STW20N95K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 17.5A TO247-3
- Stock
- 10,956
- In Stock :
- 10,956
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 12ns
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Drain to Source Breakdown Voltage :
- 950V
- Factory Lead Time :
- 17 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Tc
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Width :
- 5.15mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 9A, 10V
- Pulsed Drain Current-Max (IDM) :
- 62A
- Turn On Delay Time :
- 17 ns
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- 4 V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 250W
- Power Dissipation-Max :
- 250W Tc
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 4V
- Base Part Number :
- STW20N
- Series :
- SuperMESH5™
- Length :
- 15.75mm
- Continuous Drain Current (ID) :
- 17.5A
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Height :
- 20.15mm
- Radiation Hardening :
- No
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Resistance :
- 330mOhm
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 100V
- JEDEC-95 Code :
- TO-247AA
- Turn-Off Delay Time :
- 70 ns
- Lead Free :
- Lead Free
- Datasheets
- STW20N95K5

N-Channel Tube 330m Ω @ 9A, 10V ±30V 1500pF @ 100V 40nC @ 10V TO-247-3
The STW20N95K5 is a 950V N-channel Power MOSFET that was created with SuperMESHTM 5 technology. This breakthrough, avalanche-resistant, high voltage Power MOSFET technology is built on a unique proprietary vertical structure. As a result, on-resistance is drastically reduced, and gate charge is extremely low for applications requiring high power density and efficiency. To satisfy today's demanding efficiency requirements, improved gate charge and decreased power dissipation are required.
STW20N95K5 Features
100% avalanche tested
Ultra-low gate charge
Zener-protected
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
STW20N95K5 Applications
Datacom module
Wired networking
Wireless infrastructure
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