STW20N65M5
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- Mfr.Part #
- STW20N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 18A TO247
- Stock
- 34,793
- In Stock ：
- 34,793
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Resistance :
- 168MOhm
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Fall Time (Typ) :
- 7.5 ns
- Factory Lead Time :
- 17 Weeks
- Length :
- 15.75mm
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 130W Tc
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- Rise Time :
- 7.5ns
- Turn On Delay Time :
- 43 ns
- Element Configuration :
- Single
- Width :
- 5.15mm
- Drain to Source Breakdown Voltage :
- 650V
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1345pF @ 100V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Power Dissipation :
- 130W
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 72A
- Package / Case :
- TO-247-3
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Base Part Number :
- STW20N
- Height :
- 20.15mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 43 ns
- Continuous Drain Current (ID) :
- 18A
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9A, 10V
- Series :
- MDmesh™ V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Datasheets
- STW20N65M5
N-Channel Tube 190m Ω @ 9A, 10V ±25V 1345pF @ 100V 45nC @ 10V TO-247-3
STW20N65M5 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 270 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1345pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 43 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 43 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STW20N65M5 Features
the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 72A.
STW20N65M5 Applications
There are a lot of STMicroelectronics
STW20N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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