STW20NB50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain-source On Resistance-Max :

0.25Ohm

Series :

PowerMESH™

Power Dissipation :

250W

Avalanche Energy Rating (Eas) :

1000 mJ

JESD-609 Code :

e3

Pin Count :

3

Fall Time (Typ) :

25 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Power Dissipation-Max :

250W Tc

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Lead Free :

Contains Lead

Turn On Time-Max (ton) :

57ns

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V

Packaging :

Tube

Current Rating :

20A

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

20A

Pulsed Drain Current-Max (IDM) :

80A

JEDEC-95 Code :

TO-247AC

Rds On (Max) @ Id, Vgs :

250m Ω @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

75 pF

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Base Part Number :

STW20N

Vgs (Max) :

±30V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Rise Time :

15ns

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Package / Case :

TO-247-3

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

20A Tc