STW28N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.75mm

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

650V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

DS Breakdown Voltage-Min :

650V

Height :

20.15mm

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 100V

Vgs (Max) :

±25V

Element Configuration :

Single

Base Part Number :

STW28N

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

ECCN Code :

EAR99

Series :

MDmesh™ M2

Package / Case :

TO-247-3

Operating Temperature :

150°C TJ

Power Dissipation-Max :

170W Tc

Transistor Application :

SWITCHING

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

59 ns

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Continuous Drain Current (ID) :

20A

Number of Elements :

1

Avalanche Energy Rating (Eas) :

760 mJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Width :

5.15mm

Turn On Delay Time :

13.4 ns

Pulsed Drain Current-Max (IDM) :

80A

Drain-source On Resistance-Max :

0.18ohm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

20A Tc